Magnetic Field Sensitivity Is Not A Serious Issue For High Density MRAM Memory

By Forbes | Oct 26, 2024 at 02:52 PM EST

An article in IEEE Electron Devices Magazine discusses the impact of external magnetic fields on STT-MRAM, highlighting its potential to replace NOR flash and SRAM in embedded electronics. STT-MRAM's resilience to ambient magnetic fields is crucial for reliable operation, supported by years of magnetic technology experience.

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